HS5G M6
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | HS5G M6 |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 400V 5A DO214AB |
Datenblätte: |
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RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.3 V @ 5 A |
Spannung - Sperr (Vr) (max) | 400 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 50 ns |
Produkteigenschaften | Eigenschaften |
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Verpackung / Gehäuse | DO-214AB, SMC |
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 400 V |
Strom - Richt (Io) | 5A |
Kapazität @ Vr, F | 80pF @ 4V, 1MHz |
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
50NS, 5A, 400V, HIGH EFFICIENT R
XFORMER 15KVA 240X480-120/240
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
PWR XFMR LAMINATED 15000VA CHAS
50NS, 5A, 300V, HIGH EFFICIENT R
PWR XFMR LAMINATED 7500VA CHAS
PWR XFMR LAMINATED 3000VA CHAS
PWR XFMR LAMINATED 5000VA CHAS
TRANSFORMER 50VA - 45KVA
DIODE GEN PURP 400V 5A DO214AB
PWR XFMR LAMINATED CHAS MT
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 400V 5A DO214AB
DIODE GEN PURP 600V 5A DO214AB
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![]() HS5G M6Taiwan Semiconductor Corporation |
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